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參數(shù)資料
| 型號： | IXDP35N60B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT with optional Diode |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 101K |
| 代理商： | IXDP35N60B |
2000 IXYS All rights reserved
4 - 4
IXDP 35N60 B
IXDH 35N60 B
IXDH 35N60 BD1
Fig. 7
Typ. turn on energy and switching
times versus collector current
Fig. 8
Typ. turn off energy and switching
times versus collector current
Fig. 9
Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
10
20
30
40
50
60
0
1
2
3
4
0
20
40
60
80
10
20
30
40
50
I
C
60
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.001
0.01
0.1
1
0
5
10
15
20
25
R
G
30
35
40
0.0
0.5
1.0
1.5
2.0
0
200
400
600
800
0
5
10
15
20
25
30
35
40
0.0
0.5
1.0
1.5
2.0
0
15
30
45
60
single pulse
V
CE
= 300V
V
GE
= ±15V
R
G
= 10
W
T
J
= 125
°
C
IXDH30N60B
V
CE
= 300V
V
GE
= ±15V
I
C
= 35A
T
J
= 125
°
C
0
100
200
300
400
500
600
V
CE
700
0
20
40
60
80
100
120
A
R
G
= 10
W
T
J
= 125
°
C
V
CE
= 300V
V
GE
= ±15V
R
G
= 10
W
T
J
= 125
°
C
E
on
V
CE
= 300V
V
GE
= ±15V
I
C
= 35A
T
J
= 125
°
C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
A
E
off
E
on
t
t
R
G
W
W
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
mJ
ns
ns
mJ
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