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參數(shù)資料
| 型號： | IXFE80N50 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs Single Die MOSFET |
| 中文描述： | 72 A, 500 V, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS227, 4 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 81K |
| 代理商： | IXFE80N50 |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFE 80N50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 15 V; I
D
= I
T
, Note 2
50
70
S
C
iss
C
oss
C
rss
9890
1750
460
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
61
70
102
27
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
G
= 1
(External),
Q
g(on)
Q
gs
Q
gd
380
80
173
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
thJC
R
thCK
0.22
K/W
K/W
0.07
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
80
A
I
SM
Repetitive;
pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
320
A
V
SD
1.3
V
t
rr
Q
RM
I
RM
I
F
= 25A, -di/dt = 100 A/
μ
s, V
R
= 100 V
250
ns
μ
C
1.2
8
A
ISOPLUS-227 B
Please see IXFN80N50 data sheet
for characteristic curves.
Notes: 1. Pulse width limited by T
2. Pulse test, t
≤
300 ms, duty cycle d
≤
2%
.
3.
I
T
Test current:
I
T
= 40 A
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| IXFF24N100 | 功能描述:MOSFET 22 Amps 1000V 0.39 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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