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參數(shù)資料
| 型號： | IXFH13N80Q |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.70Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 51K |
| 代理商： | IXFH13N80Q |
1 - 2
2000 IXYS All rights reserved
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
Test Conditions
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
Maximum Ratings
800
800
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
13
52
13
A
A
A
28
750
mJ
mJ
dv/dt
I
S
T
J
T
C
= 25 C
I
DM
, di/dt 100 A/ s, V
DD
V
DSS
,
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
250
W
C
C
C
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
TO-247 AD (IXFH)
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
98626 (6/99)
Symbol
(T
J
= 25 C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 250 A
Test Conditions
Characteristic Values
Min. Typ.
Max.
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
4.5
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
T
J
= 25 C
T
J
= 125 C
50
A
1
mA
R
DS(on)
0.70
V
DSS
I
D25
R
DS(on)
t
rr
= 800 V
= 13 A
= 0.70
250 ns
Preliminary data sheet
TO-268 (D3) (IXFT) Case Style
(TAB)
G
S
HiPerFET
TM
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q
g
Features
IXYS advanced low Q
process
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Fast switching
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
IXFH 13N80Q
IXFT 13N80Q
IXYS reserves the right to change limits, test conditions, and dimensions.
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|---|---|
| IXFH13N90 | 功能描述:MOSFET 13 Amps 900V 0.8 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH140N10P | 功能描述:MOSFET 140 Amps 100V 0.011 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH14N100 | 功能描述:MOSFET 14 Amps 1000V 0.75 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH14N100Q2 | 功能描述:MOSFET 14 Amps 1000V 0.90 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH14N100Q2_08 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q2-Class |
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