參數(shù)資料
型號(hào)： IXFH22N55
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： CONN RCPT .100 50POS SNGL TIN
中文描述： 22 A, 550 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 69K
代理商： IXFH22N55
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
550
550
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
22
88
22
A
A
A
30
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
C
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
Mounting torque
1.13/10
Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 4 mA
550
V
V
2
4.5
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
250
A
1
mA
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
0.27
TO-247 AD
HiPerFET
TM
Power MOSFET
IXFH
22
N55
V
DSS
I
D (cont)
R
DS(on)
t
rr
= 550 V
= 22 A
= 0.27
250 ns
G = Gate,
S = Source,
D = Drain,
TAB = Drain
N-Channel Enhancement Mode
Avlanche Rated, High dv/dt, Low t
rr
Preliminary data
Features
International standard packages
JEDEC TO-247 AD
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
Power Factor Control Circuits
Uninterruptible Power Supplies (UPS)
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
D (TAB)
94527A (10/95)
IXYS reserves the right to change limits, test conditions, and dimensions.
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