參數(shù)資料
型號： IXFT9N80Q
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs Q-Class
中文描述： 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： PLASTIC, D3PAK-2
文件頁數(shù)： 1/2頁
文件大?。?/td> 90K
代理商： IXFT9N80Q
1999 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
800
800
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
= 25
°
C,
pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
700
9
A
A
36
I
AR
E
AR
E
AS
dv/dt
9
A
20
mJ
mJ
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
, 5 V/ns
P
D
T
J
T
JM
T
stg
T
L
180
W
-55 ... +150
150
-55 ... +150
°
C
°
C
°
C
1.6 mm (0.063 in) from case for 10 s 300
°
C
M
d
Weight
Mounting torque 1.13/10 Nm/lb.in.
TO-247 6
TO-268 4
g
g
N-Channel Enhancement Mode
Avalanche Rated Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA
3.0
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
T
J
= 25
°
C
T
J
= 125
°
C
50
μ
A
mA
1
R
DS(on)
1.1
98629 (6/99)
TO-247 AD (IXFH)
G = Gate
S = Source
D = Drain
TAB = Drain
HiPerFET
TM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
(TAB)
G
S
V
DSS
I
D25
R
DS(on)
= 800 V
= 9 A
= 1.1
t
rr
≤
250 ns
IXFH 9N80Q
IXFT 9N80Q
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