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參數(shù)資料
| 型號： | IXGH30N60 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) IGBT, High speed IGBT |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | IXGH30N60 |
1 - 4
2000 IXYS All rights reserved
96542C (7/00)
C (TAB)
GC
E
TO-247 AD
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Preliminary data
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GE
= 1 M
300
300
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
C
T
C
T
C
V
= 15 V, T
= 125°C, R
= 10
Clamped inductive load, L = 100 H @ 0.8 V
CES
T
C
= 25°C
= 25°C
= 90°C
= 25°C, 1 ms
60
30
120
A
A
A
I
= 60
A
P
C
200
W
T
J
T
JM
T
stg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
°C
260
°C
M
d
Mounting torque (M3)
1.13/10
Nm/lb.in.
Weight
TO-247 AD
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
300
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25°C
T
J
= 125°C
200
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V
±100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.6
V
Features
International standard package
JEDEC TO-247 AD
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Suitable for surface mounting
Switching speed for high frequency
applications
Easy to mount with 1 screw,
(isolated mounting screw hole)
HiPerFAST
TM
IGBT
IXGH30N30
V
CES
I
C25
V
CE(sat)
= 1.6 V
t
fi
= 180 ns
= 300 V
= 60
A
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGH30N60A | Low VCE(sat) IGBT, High speed IGBT |
| IXGH30N60B2 | HiPerFAST IGBT |
| IXGT30N60B2 | HiPerFAST IGBT |
| IXGH30N60BU1 | HiPerFAST IGBT with Diode |
| IXGT30N60BU1 | HiPerFAST IGBT with Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH30N60A | 功能描述:MOSFET 60 Amps 600V 2.6 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXGH30N60AU1 | 制造商:IXYS 功能描述:Bulk |
| IXGH30N60B | 功能描述:IGBT 晶體管 60 Amps 600V 1.8 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH30N60B2 | 功能描述:IGBT 晶體管 30 Amps 600V 1.8 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH30N60B2D1 | 功能描述:IGBT 晶體管 30 Amps 600V 1.8 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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