參數(shù)資料
型號(hào): IXGH30N60B2
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: HiPerFAST IGBT
中文描述: 70 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁數(shù): 4/5頁
文件大?。?/td> 586K
代理商: IXGH30N60B2
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 30N60B2
IXGT 30N60B2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0
25
50
75
100 125 150 175 200 225 250
I
C
- Amperes
g
f
T
J
= -40oC
25oC
125oC
Fig. 8. Dependence of Turn-Off
Energy on R
G
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0
10
20
30
R
G
- Ohms
40
50
60
70
80
E
o
-
I
C
= 12A
T
J
= 125oC
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 48A
Fig. 9. Dependence of Turn-Off
Energy
on I
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
10
15
20
25
I
C
- Amperes
30
35
40
45
50
E
o
R
G
= 5
V
GE
= 15V
V
CE
= 400V
T
J
= 125oC
T
J
= 25oC
Fig. 10. Dependence of Turn-Off
Energy on Temperature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
E
o
I
C
= 48A
R
G
= 5
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 12A
Fig. 11. Dependence of Turn-Off
Switching Time on R
G
100
200
300
400
500
600
700
0
10
20
30
R
G
- Ohms
40
50
60
70
80
S
I
C
= 24A
t
d(off)
t
fi
-
- - - - -
T
J
= 125oC
V
GE
= 15V
V
CE
= 400V
I
C
= 12A
I
C
= 48A
Fig. 12. Dependence of Turn-Off
Switching Time
on I
C
60
80
100
120
140
160
180
200
220
240
260
10
15
20
25
I
C
- Amperes
30
35
40
45
50
S
t
d(off)
t
fi
- - - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 400V
T
J
= 125oC
T
J
= 25oC
相關(guān)PDF資料
PDF描述
IXGT30N60B2 HiPerFAST IGBT
IXGH30N60BU1 HiPerFAST IGBT with Diode
IXGT30N60BU1 HiPerFAST IGBT with Diode
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