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參數(shù)資料
| 型號(hào)： | IXGH40N30B |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 60 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | IXGH40N30B |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 40N30
IXGH 40N30S IXGH 40N30AS
IXGH 40N30A
IXGH 40N30B
IXGH 40N30BS
TO-247 AD Outline
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
b
b
1
b
2
C
D
E
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
P
Q
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
3.55
5.89
3.65
6.40
.140
0.232 0.252
.144
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
1 2 3
TO-247 SMD Outline
1 - Gate
2 - Drain (collector)
3 - Source (Emitter
4 - Drain (collector
Dim.
Millimeter
Min.
Inches
Max.
Min.
Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190
.090
.075
.205
.100
.085
b
b1
1.14
1.19
1.40
2.13
.045
.075
.055
.084
C
D
0.61
20.80
0.80
21.34
.024
.819
.031
.840
E
e 5.45 BSC
15.75
16.13
.620
.635
.215 BSC
L
L1
L2
L3
L4
P
Q
R
S 6.15 BSC .242 BSC
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
.193
.106
.083
.000
.075
.201
.114
.091
.004
.083
3.55
5.59
4.32
3.65
6.20
4.83
.140
.220
.170
.144
.244
.190
Min. Recommended Footprint
(Dimensions in inches and mm)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
C90
; V
CE
= 10 V,
20
28
S
C
ies
C
oes
C
res
2500
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
210
pF
60
pF
Q
g
Q
ge
Q
gc
145
170
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
23
35
nC
50
75
nC
t
d(on)
t
ri
t
d(off)
25
ns
40
ns
40N30
40N30A
40N30B
40N30
40N30A
40N30B
40N30
40N30A
40N30B
170
100
75
230
120
75
1.6
0.75
0.3
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
25
ns
40
ns
0.3
mJ
40N30
40N30A
40N30B
40N30
40N30A
40N30B
40N30
40N30A
40N30B
250
150
90
350
220
130
3.3
1.6
0.6
500
300
180
600
330
230
4.8
2.4
1.4
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
t
fi
E
off
R
thJC
R
thCK
0.62 K/W
0.25
K/W
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V,
L = 100
μ
H,
V
CE
= 0.8 V
CES
,
R
G
= R
off
= 1.0
Switching times may
increase for V
CE
(Clamp)
> 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V,
L = 100
μ
H
V
CE
= 0.8 V
CES
,
R
G
= R
off
= 1.0
Switching times may
increase for V
CE
(Clamp)
> 0.8 V
CES
, higher T
J
or
increased R
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGH40N30BS | HiPerFAST IGBT |
| IXGH40N30S | HiPerFAST IGBT |
| IXGH40N60B | HiPerFAST IGBT(VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| IXGH40N60C | Lightspeed Series HiPerFAST IGBT(VCES為600V，VCE(sat)為2.5V的HiPerFAST絕緣柵雙極晶體管) |
| IXGH41N60 | Ultra-Low VCE(sat) IGBT(VCES為600V，VCE(sat)為1.6V的絕緣柵雙極晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH40N30BD1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFASTTM IGBT |
| IXGH40N30BD1S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 60A I(C) | TO-247SMD |
| IXGH40N30BS | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGH40N30S | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGH40N50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 75A I(C) | TO-247 |
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