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參數(shù)資料
| 型號： | IXGM30N60 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Low VCE(sat) IGBT, High speed IGBT |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-204AE |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 64K |
| 代理商： | IXGM30N60 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 30N60
IXGH 30N60A IXGM 30N60A
IXGM 30N60
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
8
16
S
C
ies
C
oes
C
res
2800
230
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
70
Q
g
Q
ge
Q
gc
150
35
60
180
50
90
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
100
200
500
200
ns
ns
ns
ns
mJ
30N60A
30N60A
2
t
d(on)
t
ri
E
on
t
d(off)
t
fi
100
200
ns
ns
mJ
ns
ns
ns
mJ
mJ
3
600
500
250
5.5
4.0
1000
1500
800
30N60
30N60A
30N60
30N60A
E
off
R
thJC
R
thCK
0.62 K/W
0.25
K/W
IXGH 30N60 and IXGH 30N60A characteristic curves are located on the
IXGH 30N60U1 and IXGH 30N60AU1 data sheets.
Inductive load, T
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 300
μ
H
V
= 0.8 V
, R
= R
= 33
Switching times may increase
for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
1 = Gate
2 = Emitter
Case = Collector
Inductive load, T
J
= 125
°
C
I
= I
, V
GE
= 15 V,
L = 300
μ
H
V
CE
= 0.8 V
,
R
G
= R
off
= 33
Remarks: Switching times
may increase for V
CE
(Clamp) > 0.8 V
CES
, higher
T
J
or increased R
G
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|---|---|
| IXGM30N60A | Low VCE(sat) IGBT, High speed IGBT |
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| IXGN50N60B | HiPerFASTTM IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGM30N60A | 制造商: 功能描述: 制造商:undefined 功能描述: |
| IXGM40N50A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | TO-3 |
| IXGM40N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High speed IGBT |
| IXGM40N60A | 功能描述:IGBT 晶體管 40 Amps 600V 3V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGN100N120 | 功能描述:IGBT 晶體管 G-series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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