- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383199 > IXGT60N60C2 (IXYS CORP) HiPerFASTTM IGBT C2-Class High Speed IGBTs PDF資料下載
參數(shù)資料
| 型號： | IXGT60N60C2 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFASTTM IGBT C2-Class High Speed IGBTs |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | TO-268, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 586K |
| 代理商： | IXGT60N60C2 |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 60N60C2
IXGT 60N60C2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= 50 A; V
CE
= 10 V,
40
58
S
C
ies
C
oes
C
res
3900
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
280
pF
97
pF
Q
g
Q
ge
Q
gc
146
nC
I
C
= 50 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
28
nC
50
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
18
ns
25
ns
95
150
ns
35
ns
0.48
0.8
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
18
ns
25
ns
0.45
mJ
130
ns
80
ns
1.2
mJ
R
thJC
R
thCK
0.26 K/W
(TO-247)
0.25
K/W
Inductive load, T
J
= 25
°
C
I
C
= 50 A, V
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2
Inductive load, T
J
= 125
°
C
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2
TO-247 AD Outline
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGH60N60 | Ultra-Low VCE(sat) IGBT(VCE(sat)為1.7V的絕緣柵雙極場效應(yīng)管) |
| IXGK60N60 | Ultra-Low VCE(sat) IGBT |
| IXGJ50N60B | HiPerFAST IGBT(VCES為600V，VCE(sat)為2.5V的HiPerFAST絕緣柵雙極晶體管) |
| IXGK120N60B | HiPerFAST IGBT |
| IXGX120N60B | HiPerFAST IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGT60N60C3D1 | 功能描述:IGBT 晶體管 60 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT64N60A3 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:GenX3 600V IGBT |
| IXGT64N60B3 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:GenX3 600V IGBT |
| IXGT6N170 | 功能描述:IGBT 晶體管 12 Amps 1700 V 4 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT6N170A | 功能描述:IGBT 晶體管 12 Amps 1700 V 7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。