參數(shù)資料
型號： IXGX50N60C2D1
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFAST IGBT with Diode
中文描述： 75 A, 600 V, N-CHANNEL IGBT
封裝： PLUS247, 3 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 636K
代理商： IXGX50N60C2D1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK50N60C2D1
IXGX50N60C2D1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min. Typ. Max.
g
fs
I
Note 1
= 40 A; V
CE
= 10 V,
40
51
S
C
ies
C
oes
C
res
3700
290
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
50
Q
g
Q
ge
Q
gc
138
25
40
nC
nC
nC
I
C
= 40 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
18
25
ns
ns
ns
ns
mJ
115
48
0.38
150
0.7
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
18
25
1.4
170
60
0.74
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
0.31 K/W
0.15
K/W
Inductive load, T
J
= 25
°
C
I
C
= 40 A, V
GE
= 15 V
V
CE
= 480 V, R
G
= R
off
= 2.0
Inductive load, T
J
= 125
°
C
I
C
= 40 A, V
GE
= 15 V
V
CE
= 480 V, R
G
= R
off
= 2.0
PLUS247 Outline
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
5.45 BSC
19.81
3.81
5.59
4.32
Inches
Min.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.215 BSC
.780
.150
.220 0.244
.170
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
20.32
4.32
6.20
4.83
.800
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
TO-264 AA Outline
Millimeter
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46 BSC
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Inches
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
Min.
.190
.100
.079
.044
.094
.114
.021
1.020
.780
Max.
.202
.114
.083
.056
.106
.122
.033
1.030
.786
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
.215 BSC
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Dim.
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= 60 A, V
GE
= 0 V,
Note 1
2.1
1.4
V
T
J
= 150
°
C
I
RM
I
F
= 60 A, V
GE
= 0 V, -di
F
/dt = 100 A/
μ
T
J
= 100
°
C
V
= 100 V
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V
8.3
A
t
rr
35
ns
R
thJC
0.65 K/W
Note 1: Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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