參數(shù)資料
型號： IXRH50N100
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： IGBT with Reverse Blocking capability
中文描述： 60 A, 1000 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 54K
代理商： IXRH50N100
1 - 2
2000 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
= 2.5 V
t
f
= 75 ns
= 1000 / 1200 V
= 60 A
0
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Features
G
IGBT with NPT (non punch through)
structure
G
reverse blocking capability indepen-
dent from gate voltage
- function of series diode monolithically
integrated
- no external series diode required
- soft reverse recovery
G
positive temperature coefficient of
saturation voltage
- optimum current distribution
when paralleled
G
Epoxy of TO 247 package meets
UL 94V-0
Applications
converters requiring reverse blocking
capability:
- current source inverters
- matrix converters
- bi-directional switches
- resonant converters
- induction heating
- auxiliary switches for soft switching
in the main current path
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
IXRH 50N120
IXRH 50N100
±
1200
±
1000
V
V
V
GES
±
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
60
40
A
A
I
CM
V
CEK
V
= 0/15 V; R
= 22
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
80
500
A
V
P
tot
T
C
= 25°C
300
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 40 A; V
GE
= 15 V; T
VJ
= 25°C
2.5
3.0
3.1
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 2 mA; V
GE
= V
CE
4
8
V
I
CES
V
CE
= 0.8 V
CES
;
V
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.4
mA
mA
3.0
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
500
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
80
100
380
75
3.6
2.1
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 500V; V
GE
= 15 V; I
C
= 40 A
4
nF
nC
150
I
RM
t
rr
I
F
= 40 A; di
/dt = -400 A/μs; T
VJ
= 125°C
V
CE
= -500 V; V
GE
= 15 V
58
840
A
ns
R
thJC
0.42 K/W
Inductive load, T
= 125°C
V
CE
= 500 V; I
C
= 40 A
V
GE
= 0/15 V; R
G
= 22
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
C
E
G
IGBT with Reverse
Blocking capability
IXRH 50N120
IXRH 50N100
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXRH50N120 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Reverse Blocking capability
IXRH50N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Reverse Blocking capability
IXRH50N80 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Reverse Blocking capability
IXRP15N120 功能描述:IGBT 晶體管 15 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXRR40N120 功能描述:IGBT 晶體管 40 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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