參數(shù)資料
型號(hào): IXSA12N60AU1
廠商: IXYS CORP
元件分類(lèi): 功率晶體管
英文描述: Low VCE(sat) IGBT with Diode(VCE(sat)典型值為2.5V絕緣柵雙極晶體管(帶二極管))
中文描述: 24 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝: D2PAK-3
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 229K
代理商: IXSA12N60AU1
1998 IXYS All rights reserved
G
E
TAB
V
CES
I
C25
V
CE(sat)
= 2.5 V
= 600 V
=
24 A
Low V
CE(sat)
IGBT
with Diode
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 150
Clamped inductive load, L = 300
μ
H
24
A
12
A
48
A
I
= 24
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125
°
C
R
G
= 82
,
non repetitive
T
C
= 25
°
C
5
μ
s
P
C
T
J
T
JM
T
stg
Weight
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
2
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10 s
300
°
C
260
°
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TO-263AA
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 750
μ
A, V
CE
= V
GE
600
V
3.5
6.5
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
2.5
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.5
V
IXSA 12N60AU1
Features
International standard package
Guaranteed Short Circuit SOA
capability
Low V
- for low on-state conduction losses
High peak current handling capability
MOS Gate turn-on
- drive simplicity
Fast fall time for switching speeds
up to 20 kHz
Applications
AC motor speed control
Brushless motor controls
Servo & robotic controls
Advantages
High power density
96540A (9/98)
Preliminary data sheet
相關(guān)PDF資料
PDF描述
IXSH10N120AU1 IGBT with Diode
IXSH10N60 High Speed IGBT - Short Circuit SOA Capability
IXSH10N60A High Speed IGBT - Short Circuit SOA Capability
IXSH15N120A IGBT
IXSH15N120BD1 S Series - Improved SCSOA Capability
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXSA15N120B 功能描述:IGBT 晶體管 30 Amps 1200V 3.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSA16N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low V CE(sat) IGBT - Short Circuit SOA Capability
IXSA20N60B2D1 功能描述:IGBT 晶體管 20 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH 24N60AU1 制造商:IXYS 功能描述:Bulk
IXSH 45N120 制造商:IXYS 功能描述:Bulk