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參數(shù)資料
| 型號(hào)： | IXSH30N60BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Speed IGBT with Diode(VCES為600V，VCE(sat)為2.0V的高速絕緣柵雙極晶體管(帶二極管）) |
| 中文描述： | 55 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | IXSH30N60BD1 |
1 - 5
2000 IXYS All rights reserved
TO-247AD
(IXSH)
G
CE
G = Gate
E = Emitter
C = Collector
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 10
Clamped inductive load, V
CL
= 0.8 V
CES
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 33
non repetitive
T
C
= 25 C
55
30
A
A
A
110
I
CM
= 60
A
t
(SCSOA)
10
s
P
C
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
200
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
300
C
Weight
TO-247/TO-268
TO-264
6/4
10
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750 A, V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
600
V
V
4
7
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
3
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
V
GE
= 15 V
I
C
= I
C90
I
C
= I
C25
2.0
2.7
V
V
Features
International standard packages:
JEDEC TO-247, TO-264& TO-268
Short Circuit SOA capability
Medium freqeuncy IGBT and anti-
parallel FRED in one package
New generation HDMOS
TM
process
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Surface mountable, high power case
style
Reduces assembly time and cost
High power density
98517A (7/00)
TO-268 (D3)
(IXST)
G
C
E
G
CE
TO-264
(IXSK)
IXSH 30N60BD1
IXSK 30N60BD1
IXST 30N60BD1
High Speed IGBT with Diode
Short Circuit SOA Capability
V
CES
I
C25
V
CE(sat)
t
fi
=
=
=
= 140 ns
600 V
55 A
2.0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXSH30N60B | High Speed IGBT |
| IXSH30N60C | High Speed IGBT |
| IXST30N60B | High Speed IGBT |
| IXST30N60C | High Speed IGBT |
| IXSH30N60CD1 | Short Circuit SOA Capability |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH30N60C | 功能描述:IGBT 晶體管 55 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60CD1 | 功能描述:IGBT 晶體管 55 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60U1 | 功能描述:IGBT 晶體管 30 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH35N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-247AD |
| IXSH35N100A | 功能描述:IGBT 晶體管 35 Amps 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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