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參數(shù)資料
| 型號： | IXSH45N120B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage IGBT(VCES為1200V，VCE(sat)為3.0V的高電壓絕緣柵雙極晶體管) |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 54K |
| 代理商： | IXSH45N120B |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1200
1200
V
V
20
30
V
V
T
C
= 25 C (limited by leads)
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 5
Clamped inductive load
75
45
180
A
A
A
I
= 90
@ 0.8 V
CES
A
t
SC
T
J
= 125 C, V
GE
= 720 V; V
GE
= 15 V, R
G
= 5
10
s
P
C
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
300
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
300
C
Weight
TO-247
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1.0 mA, V
GE
= 0 V
= 250 A, V
CE
= V
GE
1200
V
V
3
6
I
CES
V
= 0.8 V
CES
Note 1
50
2.5
A
T
J
= 125 C
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
Note 2
= I
C90,
V
GE
= 15 V
2.5
2.6
3.0
V
V
T
J
= 125 C
Features
Epitaxial Silicon drift region
- fast switching
- small tail current
MOS gate turn-on for drive simplicity
Applications
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Welding
98713A (7/00)
G = Gate
S = Emitter
C = Collector
TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 ( IXST)
(TAB)
G
E
IXSH 45N120B
IXST 45N120B
I
C25
V
CES
V
CE(sat)
= 3.0 V
= 75 A
= 1200 V
High Voltage IGBT
"S" Series - Improved SCSOA Capability
G
C
E
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXSH45N120 | High Voltage, Low VCE(sat) IGBT |
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| IXSK35N120BD1 | HIGH VOLTAGE IGBT WITH DIODE |
| IXSX35N120BD1 | HIGH VOLTAGE IGBT WITH DIODE |
| IXSK35N120AU1 | High Voltage IGBT with Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH50N60B | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH50N60BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247SMD |
| IXSK30N60BD1 | 功能描述:IGBT 晶體管 55 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK30N60CD1 | 功能描述:IGBT 晶體管 55 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK35N120AU1 | 功能描述:IGBT 晶體管 70 Amps 1200V 4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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