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參數(shù)資料
| 型號： | IXSX80N60B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Current IGBT Short Circuit SOA Capability |
| 中文描述： | 160 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLUS247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 54K |
| 代理商： | IXSX80N60B |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
600
600
V
V
V
CES
V
GEM
Continuous
Transient
±
20
±
30
V
V
I
C25
I
C90
I
L(RMS)
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
(silicon chip capability)
(silicon chip capability)
(silicon chip capability)
160
80
75
300
A
A
A
A
SSOA
(RBSOA)
V
= 15 V, T
= 125
°
C, R
G
= 5
Clamped inductive load
I
= 160
@ 0.8 V
CES
A
tsc
SCSOA
V
GE
= 15 V, V
= 0.6 V
T
J
= 125
°
C
R
G
= 5
,
non-repetitive
10
μ
s
P
C
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25
°
C
500
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
TO-264
0.4/6 Nm/lb.in.
PLUS 247
TO-264
6
10
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
600
4
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 500
μ
A, V
GE
= 0 V
= 8 mA, V
CE
= V
GE
V
V
8
I
CES
V
CE
= V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
2
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
200
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.5
V
Features
!
International standard packages
!
Very high current, fast switching IGBT
!
Low V
- for minimum on-state conduction
losses
!
MOS Gate turn-on
- drive simplicity
Applications
!
AC motor speed control
!
DC servo and robot drives
!
DC choppers
!
Uninterruptible power supplies (UPS)
!
Switch-mode and resonant-mode
power supplies
Advantages
!
PLUS 247
TM
package for clip or spring
mounting
!
Space savings
!
High power density
98721B (07/02)
PLUS 247
TM
(IXSX)
G
C
(TAB)
G = Gate
C = Collector
E = Emitter
TAB = Collector
IXSK 80N60B
IXSX 80N60B
V
CES
I
C25
V
CE(sat)
= 2.5 V
= 600 V
= 160 A
E
G
C
(TAB)
TO-264 AA
(IXSK)
E
High Current
IGBT
Short Circuit SOA Capability
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