參數(shù)資料
型號(hào)： IXTA3N120
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage Power MOSFETs
中文描述： 3 A, 1200 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： PLASTIC, TO-263, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 102K
代理商： IXTA3N120
2001 IXYS All rights reserved
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Features
International standard packages
Low R
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
High Voltage
Power MOSFETs
G
S
TO-263 (IXTA)
GDS
TO-220 (IXTP)
G = Gate
S = Source
D = Drain
TAB = Drain
IXTA/IXTP 3N120
IXTA/IXTP 3N110
D (TAB)
D (TAB)
V
DSS
1200 V
1100 V
I
D25
3 A
3 A
R
DS(on)
4.5
4.0
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
3N120
3N110
1200
1100
1200
1100
V
V
V
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
3N120
3N110
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
3
A
A
A
12
3
E
AR
E
AS
T
C
= 25
°
C
20
mJ
700
mJ
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
C
= 25
°
C
150
W
T
J
T
JM
T
stg
-55 to +150
150
-55 to +150
°
C
°
C
°
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
°
C
M
d
Mounting torque (TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220 4
TO-263 2
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
3N120
3N110
1200
1100
2.5
V
V
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
mA
1
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
3N120
3N110
4.5
4.0
Preliminary Data Sheet
98844A (11/01)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTA3N120TRL 功能描述:MOSFET N-CH 1200V 3A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IXTA3N50D2 功能描述:MOSFET N-CH MOSFETS (D2) 500V 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA3N50P 功能描述:MOSFET 3.6 Amps 500 V 2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA3N60P 功能描述:MOSFET 3 Amps 600V 2.9 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA42N25P 功能描述:MOSFET 42 Amps 250V 0.084 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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