參數(shù)資料
型號： IXTA62N15P
廠商： IXYS CORP
元件分類： JFETs
英文描述： PolarHT Power MOSFET
中文描述： 62 A, 150 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263, 3 PIN
文件頁數(shù)： 1/5頁
文件大小： 255K
代理商： IXTA62N15P
2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
150
150
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
62
A
A
150
I
AR
50
A
E
AR
E
AS
30
mJ
1.0
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 10
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
350
W
T
J
T
JM
T
stg
-55 ... +175
°
C
°
C
°
C
175
-55 ... +150
T
L
T
SOLD
Md
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
300
2600
°
C
°
C
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-220
TO-263
5.5
g
g
g
4
3
G = Gate
S = Source
D = Drain
TAB = Drain
DS99154E(12/05)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
150
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
5.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 150
°
C
250
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
33
40
m
PolarHT
TM
Power MOSFET
IXTA 62N15P
IXTP 62N15P
IXTQ 62N15P
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-220 (IXTP)
TO-263 (IXTA)
TO-3P (IXTQ)
G
D
S
(TAB)
D
(TAB)
G
S
G
S
(TAB)
V
DSS
I
D25
R
DS(on)
≤
= 150 V
= 62 A
40
m
相關(guān)PDF資料
PDF描述
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