參數(shù)資料
型號: IXTH10P50
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: P-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓-500V,導(dǎo)通電阻0.90Ω的P溝道增強(qiáng)型標(biāo)準(zhǔn)功率MOSFET)
中文描述: 10 A, 500 V, 0.9 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 41K
代理商: IXTH10P50
2 - 2
2000 IXYS All rights reserved
IXTH 10P50
IXTH 11P50
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
1 2 3
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= -10 V; I
D
= I
D25
, pulse test
5
9
S
C
iss
C
oss
C
rss
4700
430
135
pF
pF
pF
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
33
27
35
35
ns
ns
ns
ns
V
GS
= -10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 4.7
(External)
Q
g(on)
Q
gs
Q
gd
160
46
92
nC
nC
nC
V
GS
= -10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCS
0.42
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0
10P50
11P50
-10
-11
A
A
I
SM
Repetitive; pulse width limited by T
JM
10P50
11P50
-40
-44
A
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
300
μ
s, duty cycle d
2 %
-3
V
t
rr
I
F
= I
S
, di/dt = 100 A/
μ
s
500
ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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