參數(shù)資料
型號： IXTH1N100
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage MOSFET
中文描述： 1.5 A, 1000 V, 11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
文件頁數(shù)： 1/2頁
文件大?。?/td> 83K
代理商： IXTH1N100
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
1.5
A
A
6
I
AR
E
AR
E
AS
dv/dt
1.5
A
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 18
6
mJ
mJ
200
I
S
3
V/ns
P
D
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
60
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (TO-247)
1.13/10 Nm/lb.in.
TO-268 4
TO-247 6
g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
High Voltage MOSFET
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 25
μ
A
1000
2.5
V
V
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
μ
A
500
R
DS(on)
V
= 10 V, I
D
= 1.0A
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
11
Features
International standard packages
High voltage, Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
High frequency matching
Advantages
Space savings
High power density
98886 (1/2)
2002 IXYS All rights reserved
V
DSS
I
D25
R
DS(on)
= 1000 V
= 1.5 A
= 11
Advance Technical Information
IXTH 1N100
IXTT 1N100
N-Channel Enhancement Mode
Avalanche Energy Rated
TO-247 AD (IXTH)
D (TAB)
TO-268 Case Style
(TAB)
G
S
相關PDF資料
PDF描述
IXTT1N100 High Voltage MOSFET
IXTH20N60 MegaMOS FET
IXTM20N60 MegaMOS FET
IXTH21N50 MegaMOSFET
IXTM21N50 MegaMOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IXTH1N250 功能描述:MOSFET 1 Amps 2500V 40 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH200N075T 功能描述:MOSFET 200 Amps 75V 4.4 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH200N085T 功能描述:MOSFET 200 Amps 85V 5.0 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH200N10T 功能描述:MOSFET 200 Amps 100V 5.4 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH20N50D 功能描述:MOSFET 20 Amps 500V 0.33 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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