參數(shù)資料
型號： IXTH8P50
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： IC ARM920T MCU 200MHZ 352-PBGA
中文描述： 8 A, 500 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 75K
代理商： IXTH8P50
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
-500
V
-500
V
Continuous
±
20
±
30
V
V
T
C
= 25
°
C
7P50
8P50
-7
-8
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
J
7P50
8P50
-28
-32
A
A
I
AR
T
C
= 25
°
C
7P50
8P50
-7
-8
A
A
E
AR
P
D
T
J
T
JM
T
stg
T
L
T
C
= 25
°
C
T
C
= 25
°
C
30
mJ
180
W
-55 ... +150
°
C
°
C
°
C
°
C
150
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
M
d
Weight
Mounting torque
1.13/10
Nm/lb.in.
6
g
TO-247 AD
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
94534E (6/01)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= -250
μ
A
BV
DSS
Temperature Coefficient
V
DS
= V
GS
, I
D
= -250
μ
A
V
GS(th)
Temperature Coefficient
-500
V
0.054
%/K
V
GS(th)
-3.0
-5.0
V
-0.122
%/K
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
-200
μ
A
mA
-1
R
DS(on)
V
GS
= -10 V, I
D
= 0.5 I
D25
7P50
8P50
1.5
1.2
0.6
R
DS(on)
Temperature Coefficient
%/K
Features
International standard package
JEDEC TO-247 AD
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
V
DSS
I
D25
R
DS(on)
IXTH 7P50
IXTH 8P50
-500V -7 A 1.5
-500V -8 A 1.2
相關(guān)PDF資料
PDF描述
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IXTT88N15 High Current Power MOSFET
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IXTT88N30P PolarHT Power MOSFET
IXTH96N20P N-Channel Engancement Mode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTH90N15T 功能描述:MOSFET N-CH 150V 90A TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IXTH90P10P 功能描述:MOSFET -90.0 Amps -100V 0.250 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH96N20P 功能描述:MOSFET 96 Amps 200V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH96N25T 功能描述:MOSFET 96 Amps 250V 36 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH96P085T 功能描述:MOSFET -96 Amps -85V 0.013 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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