參數(shù)資料
型號(hào)： IXTK102N30P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHT Power MOSFET
中文描述： 102 A, 300 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 228K
代理商： IXTK102N30P
2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
300
300
V
V
V
GSS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
D(RMS)
I
DM
T
C
= 25
°
C
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
102
A
75
A
250
A
I
AR
60
A
E
AR
E
AS
60
mJ
2.5
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
700
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
T
SOLD
M
d
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
300
260
°
C
°
C
1.13/10 Nm/lb.in.
Weight
TO-264
10
g
G = Gate
S = Source
D = Drain
TAB = Drain
DS99130E(12/05)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
300
V
V
GS(th)
V
DS
= V
GS
, I
D
= 500
μ
A
2.5
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
200
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 125
°
C
250
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
33
m
PolarHT
TM
Power MOSFET
IXTK 102N30P
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
V
DSS
I
D25
R
DS(on)
≤
33 m
= 300 V
= 102 A
TO-264 (IXTK)
GDS
(TAB)
相關(guān)PDF資料
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IXTK120N25P PolarHT Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTK110N20L2 功能描述:MOSFET LINEAR L2 SERIES MOSFET 200V 110A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK110N30 功能描述:MOSFET 110 Amps 300V 0.026 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK120N20P 功能描述:MOSFET 120 Amps 200V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK120N25 功能描述:MOSFET 120 Amps 250V 0.020 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK120N25P 功能描述:MOSFET 120 Amps 250V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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