參數(shù)資料
型號(hào)： IXTK21N100
廠商： IXYS CORP
元件分類： JFETs
英文描述： High Voltage MegaMOSTMFETs
中文描述： 21 A, 1000 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264AA, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 137K
代理商： IXTK21N100
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
IXTK
IXTN
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
1000
1000
1000
1000
V
V
±
20
±
30
±
20
±
30
V
V
T
C
= 25
°
C, Chip capability
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
21
84
21
84
A
A
500
520
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
-
°
C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
-
-
2500
3000
V~
V~
M
d
0.9/6
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
-
Weight
10
30
g
IXTK 21N100
IXTN 21N100
V
DSS
I
D25
R
DS(on)
= 0.55
= 1000 V
= 21 A
TO-264 AA (IXTK)
S
G
D
D
S
G
S
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
TAB = Drain
S
G
S
D
N-Channel, Enhancement Mode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 6 mA
V
DS
= V
GS
, I
D
= 500
μ
A
V
GS
=
±
20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1000
V
V
2
4.5
±
200
nA
T
J
= 25
°
C
T
J
= 125
°
C
500
μ
A
mA
2
R
DS(on)
0.55
92808I(5/97)
Features
l
International standard packages
l
JEDEC
TO-264,
epoxy
meet
UL
94
V-0
flammability classification
l
miniBLOC,
(ISOTOP-compatible) with
Aluminium nitride isolation
l
Low R
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Low package inductance
Applications
l
DC-DC converters
l
Synchronous rectification
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
Temperature and lighting controls
Advantages
l
Easy to mount
l
Space savings
l
High power density
D (TAB)
miniBLOC, SOT-227 B
E153432
High Voltage
MegaMOS
TM
FETs
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXTN21N100 High Voltage MegaMOSTMFETs
IXTK250N10 High Current MegaMOSFET
IXTK33N50 High Current MegaMOSFET
IXTK62N25 High Current MegaMOSFET
IXTM12N45 12 AMPS, 450-500V, 0.4OM/0.5OM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTK22N100L 功能描述:MOSFET N-CHAN 1000V 22A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK250N10 功能描述:MOSFET 250 Amps 100V 0.005 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK32P60P 功能描述:MOSFET -32 Amps -600V 0.350 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK33N45 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 33A I(D) | TO-264AA
IXTK33N50 功能描述:MOSFET 33 Amps 500V 0.17 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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