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參數(shù)資料
| 型號： | IXTT75N10 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | MegaMOS FET |
| 中文描述： | 75 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA |
| 封裝： | TO-268, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | IXTT75N10 |
1997 IXYS All rights reserved
S
G
S
D
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
High Current
Power MOSFET
N-Channel Enhancement Mode
V
DSS
500 V
500 V
I
D25
58 A 85
m
61 A 75 m
R
DS(on)
IXTN 58N50
IXTN 61N50
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1.0 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25°C
IXTN 58N50
IXTN 61N50
IXTN 58N50
IXTN 61N50
58
61
232
244
A
A
A
A
I
DM
T
= 25°C
Pulse width limited by T
JM
P
D
T
C
= 25°C
625
W
T
J
T
JM
T
stg
-40 ... +150
°C
°C
°C
150
-40 ... +150
V
ISOL
50/60 Hz, RMS
t = 1 minute
t = 1s
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ.
500
Max.
V
DSS
V
GS
= 0 V, I
D
= 5 mA
V
V
GS(th)
V
DS
= V
GS
,
I
D
= 12 mA
1.7
4.0
V
I
GSS
V
GS
=
±
20 V DC, V
DS
= 0
±
200
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
500
μA
mA
2
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
58N50
61N50
85
75
m
m
Pulse test, t
≤
300 μs, duty cycle
≤
2 %
Preliminary Data
Features
International standard package
Isolation voltage 3000V (RMS)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low drain-to-case capacitance
(<100 pF)
- reduced RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Aluminium Nitride Isolation
- increased current ratings
Applications
DC choppers
AC motor speed controls
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched mode and resonant mode
power supplies
Advantages
Easy to mount
Space savings
High power density
miniBLOC, SOT-227 B
E153432
95501B(4/97)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXTN58N50 | High Current Power MOSFET |
| IXTN61N50 | High Current Power MOSFET |
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| IXTK82N25P | PolarHT Power MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTT75N10L2 | 功能描述:MOSFET LINEAR L2 SERIES MOSFET 100V 75A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTT75N15 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Current Power MOSFET N-Channel Enhancement Mode |
| IXTT75N20L2 | 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTT80N20L | 功能描述:MOSFET Standard Linear Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTT82N25P | 功能描述:MOSFET 82 Amps 250V 0.035 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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