參數(shù)資料
型號: J210
廠商: LINEAR INTEGRATED SYSTEMS INC
元件分類: 小信號晶體管
英文描述: LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
中文描述: Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 3/12頁
文件大小: 100K
代理商: J210
1997 Dec 01
3
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm
2
.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
±
25
25
25
10
400
150
150
UNIT
V
DS
V
GSO
V
DGO
I
G
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
drain-gate voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
65
V
V
V
mA
mW
°
C
°
C
open drain
open source
T
amb
50
°
C; note 1; see Fig.13
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient; note 1
250
K/W
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