參數(shù)資料
型號(hào): J211
廠(chǎng)商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: N-Channel RF Amplifier
中文描述: VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 100K
代理商: J211
1997 Dec 01
9
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
Fig.16 Common source inputadmittance as a
function of frequency; typical values.
V
DS
= 15 V; V
GS
= 0; T
amb
= 25
°
C.
handbook, halfpage
yis
(mS)
2
10
1
10
1
10
2
MGM291
10
10
2
10
3
f (MHz)
gis
bis
Fig.17 Common source transfer admittance as
a function of frequency; typical values.
handbook, halfpage
2
10
1
MGM292
10
10
2
10
3
yfs
(mS)
f (MHz)
gfs
bfs
V
DS
= 15 V; V
GS
= 0; T
amb
= 25
°
C.
Fig.18 Common source reverseadmittance as
a function of frequency; typical values.
handbook, halfpage
yrs
(mS)
1
10
1
10
2
10
3
MGM293
10
10
2
10
3
f (MHz)
brs
grs
V
DS
= 15 V; V
GS
= 0; T
amb
= 25
°
C.
Fig.19 Common source outputadmittance as
a function of frequency; typical values.
handbook, halfpage
MGM294
10
10
2
10
3
1
10
1
10
2
yos
(mS)
f (MHz)
gos
bos
V
DS
= 15 V; V
GS
= 0; T
amb
= 25
°
C.
相關(guān)PDF資料
PDF描述
J210 N-Channel JFET
J211 N-Channel JFET
J210 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
J211 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
J230 TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 3MA I(DSS) | TO-226AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
J211"D74Z 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL JFET -25V TO-92
J211 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N TO-92
J211_D27Z 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS(最大值/最小值): 電阻汲極/源極 RDS(導(dǎo)通): 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流(Vgs=0 時(shí)的 Idss):25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
J211_D74Z 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS(最大值/最小值): 電阻汲極/源極 RDS(導(dǎo)通): 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流(Vgs=0 時(shí)的 Idss):25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
J211_Q 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS(最大值/最小值): 電阻汲極/源極 RDS(導(dǎo)通): 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流(Vgs=0 時(shí)的 Idss):25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel