參數(shù)資料
型號(hào): J305
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel JFET(最小柵源擊穿電壓-30V,最小飽和漏極電流1mA的N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述: N溝道場(chǎng)效應(yīng)(最小柵源擊穿電壓- 30V的,最小飽和漏極電流1mA的的N溝道結(jié)型場(chǎng)效應(yīng)管)
文件頁數(shù): 3/6頁
文件大?。?/td> 70K
代理商: J305
J304/305
Siliconix
P-37404—Rev. C, 04-Jul-94
3
Typical Characteristics
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
g
f
g
fs
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
DG
– Drain-Gate Voltage (V)
I
D
– Drain Current (mA)
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Gate Leakage Current
5 mA
0.1 mA
I
GSS
@ 25 C
T
A
= 25 C
T
A
= 125 C
I
GSS
@
125 C
Output Characteristics
Output Characteristics
Common-Source Forward Transconductance
vs. Drain Current
0.1
1
10
10
8
0
g
f
V
GS(off)
= –3 V
T
A
= –55 C
125 C
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
V
GS
= 0 V
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
V
GS
= 0 V
–0.3 V
I
D
10
8
0
6
4
2
20
0
16
12
8
4
0
–10
–2
–4
–6
–8
50
40
0
30
20
10
500
0
400
300
200
100
0
–10
–2
–4
–6
–8
0
12
8
4
16
20
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
100 nA
6
4
2
10
0
8
6
4
2
0
10
2
4
6
8
15
0
12
9
6
3
0
10
2
4
6
8
I
D
I
G
I
D
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –2 V
V
GS(off)
= –3 V
I
DSS
r
DS
g
os
1 mA
0.1 mA
5 mA
1 mA
25 C
r
D
)
S
g
–1.4 V
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