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參數(shù)資料
| 型號： | J310 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-25V，最小飽和漏極電流24mA的N溝道結型場效應管) |
| 中文描述： | N溝道場效應（最小柵源擊穿電壓- 25V的，最小飽和漏極電流二十四毫安的N溝道結型場效應管） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 98K |
| 代理商： | J310 |
J/SST/U308 Series
2
Siliconix
S-52424—Rev. F, 14-Apr-97
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
Gate Current :
–25 V
10 mA
20 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . . . . .
(J/SST Prefixes)
. . . . . . . . . . . . . . . .
(U Prefix)
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
(J/SST Prefixes)
. . . . . . . . . .
(U Prefix)
. . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Storage Temperature :
–55 to 150 C
–65 to 175 C
Operating Junction Temperature
–55 to 150 C
. . . . . . . . . . . . . . . . . . . .
Power Dissipation :
(J/SST Prefixes)
a
(U Prefix)
b
350 mW
500 mW
. . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . .
Notes
a.
b.
Derate 2.8 mW/ C above 25 C
Derate 4 mW/ C above 25 C
Specifications
a
for J/SST308, J/SST309 and J/SST310
Limits
J/SST308
J/SST309
J/SST310
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–35
–25
–25
–25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 nA
–1
–6.5
–1
–4
–2
–6.5
Saturation Drain Current
c
I
DSS
V
DS
= 10 V, V
GS
= 0 V
12
60
12
30
24
60
mA
Gate Reverse Current
I
GSS
V
GS
= –15 V, V
DS
= 0 V
–0.002
–1
–1
–1
nA
T
A
= 125 C
–0.001
–1
–1
–1
A
Gate Operating Current
I
G
V
DG
= 9 V, I
D
= 10 mA
V
GS
= 0 V, I
D
= 1 mA
I
G
= 10 mA
V
DS
= 0 V
–15
pA
Drain-Source On-Resistance
r
DS(on)
35
Gate-Source Forward Voltage
V
GS(F)
J
0.7
1
1
1
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
14
8
10
8
mS
Common-Source
Output Conductance
g
os
110
250
250
250
S
Common-Source
Input Capacitance
C
iss
J
4
5
5
5
V
DS
= 10 V
V
GS
= –10 V
f = 1 MHz
SST
4
pF
Common-Source
Reverse Transfer Capacitance
C
rss
J
1.9
2.5
2.5
2.5
SST
1.9
Equivalent Input
Noise Voltage
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 100 Hz
6
nV
√
Hz
High Frequency
Common-Gate
Forward Transconductance
g
fg
f = 105 MHz
14
f = 450 MHz
13
mS
Common-Gate
Output Conductance
g
og
f = 105 MHz
0.16
V
DS
= 10 V
I
D
= 10 mA
f = 450 MHz
0.55
Common Gate Power Gain
Common-Gate Power Gain
d
G
pg
f = 105 MHz
16
f = 450 MHz
11.5
dB
Noise Figure
NF
f = 105 MHz
1.5
f = 450 MHz
2.7
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
Gain (G
pg
) measured at optimum input noise match.
NZB
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相關代理商/技術參數(shù) |
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|---|---|
| J-310 | 制造商:NTE Electronics 功能描述: |
| J310 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR JFET N TO-92 |
| J310_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel RF Amplifier |
| J310_D26Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| J310_D26Z_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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