參數(shù)資料
型號(hào): JA100O
英文描述: TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-92
中文描述: 晶體管|晶體管|進(jìn)步黨| 35V的五(巴西)總裁| 100mA的一(c)|至92
文件頁數(shù): 3/8頁
文件大?。?/td> 56K
代理商: JA100O
1998 Aug 04
3
Philips Semiconductors
Product specification
PNP general purpose transistor
JA101
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
45
5
100
200
100
500
+150
150
+150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
T
amb
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
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