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參數(shù)資料
| 型號(hào)： | JA100Q |
| 英文描述： | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 35V的五（巴西）總裁| 100mA的一（c）|至92 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | JA100Q |
1998 Aug 04
4
Philips Semiconductors
Product specification
PNP general purpose transistor
JA101
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
15
4
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
45 V
I
E
= 0; V
CB
=
45 V; T
j
= 125
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
1 mA; V
CE
=
5 V
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
JA101
JA101P
JA101Q
JA101R
collector-emitter saturation voltage I
C
=
10 mA; I
B
=
0.5 mA
135
135
200
300
550
500
700
850
12
130
600
270
400
600
300
700
6
10
V
CEsat
mV
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
=
100 mA; I
B
=
5 mA
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100 mA; I
B
=
5 mA
I
C
=
2 mA; V
CE
=
5 V
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
0.5 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz 100
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
V
BEsat
base-emitter saturation voltage
V
BE
C
c
C
e
f
T
F
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JA100R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-92 |
| JA101 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistor |
| JA101O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| JA101P | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistor |
| JA101PQ | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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