參數(shù)資料
型號(hào): JA100R
英文描述: TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-92
中文描述: 晶體管|晶體管|進(jìn)步黨| 35V的五(巴西)總裁| 100mA的一(c)|至92
文件頁數(shù): 2/8頁
文件大?。?/td> 56K
代理商: JA100R
1998 Aug 04
2
Philips Semiconductors
Product specification
PNP general purpose transistor
JA101
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: JC501.
PINNING
PIN
DESCRIPTION
1
2
3
base
collector
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM285
2
1
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
45
200
500
600
UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
open emitter
open base
135
100
V
V
mA
mW
T
amb
25
°
C
I
C
=
1 mA; V
CE
=
5 V
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz
MHz
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