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參數(shù)資料
| 型號(hào)： | JAN1N649-1 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.15 A, SILICON, SIGNAL DIODE |
| 封裝： | SIMILAR TO DO-35, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 85K |
| 代理商： | JAN1N649-1 |
FEATURES
1N649-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240
SILICON RECTIFIER
METALLURGICALLY BONDED
HERMETICALLY SEALED
DOUBLE PLUG CONSTRUCTION
DESIGN DATA
Case: Hermetically sealed glass package per MIL-
PRF-19500/240 DO-35 outline
Lead Material: Copper clad steel
Lead Finish: Tin/Lead
Thermal Resistance (RθJL): 250°C/W maximum
at L=.375”
Thermal Impedance (ZθJX): 35°C/W maximum
Marking: Blue body coat, Black digits.
Polarity: Cathode end is banded.
MAXIMUM RATINGS AT 25
°C
Operating Temperature:
-65
°C to +175°C
Storage Temperature:
-65
°C to +175°C
Surge Current A, sine 8.3mS:
5.0A
Total Power Dissipation:
500mW
Operating Current:
400mA, TA= +25°C
Operating Current:
150mA, TA= +150°C
Derating Factor:
2mA/
°C above +25°C
Derating Factor:
6mA/
°C above +150°C
D.C. Reverse Voltage (VRWM):
600V
AC ELECTRICAL CHARACTERISTICS AT 25
°C
Symbol
Min
Max
Capacitance @ VR = 4V
pF
-
20
DC ELECTRICAL CHARACTERISTICS
VF
IR
Ambient
(
°C)
IF
mA
Min
V
Max
V
Ambient
(
°C)
VR
V (dc)
Min
A
Max
A
25
400
0.80
1.00
25
600
-
0.050
150
400
0.70
0.95
25
720(ac)
-
50
-55
400
-
1.20
150
600
-
25
IRELAND - GORT ROAD
, ENNIS, CO. CLARE
PHONE:
+353 65 6840044
TOLL FREE:
+186 62 702434
FAX:
+353 65 6822298
U.S.A. DOMESTIC SALES CONTACT
PHONE:
(617) 926 0404
TOLL FREE:
1 800 666 2999
WWW.MICROSEMI.COM
1N649-1
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