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參數(shù)資料
| 型號： | JAN1N967D-1 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 18 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 221K |
| 代理商： | JAN1N967D-1 |
Silicon 500 mW Zener Diodes
SCOTTSD A L E DIVISION
1N957B, -1 thru 1N992B, -1 DO-35
W
.Mi
cr
os
em
i
.C
O
M
1N
95
7B
–
99
2B
(D
O
-3
5)
ELECTRICAL CHARACTERISTICS* @ 25oC
NOMINAL
ZENER
VOLTAGE
(Note 2)
VZ
ZENER
TEST
CURRENT
IZT
MAX. ZENER IMPEDANCE
(Note 3)
ZZT @ IZT
ZZK
@ IZK
MAX. DC
ZENER
CURRENT
(Note 4)
IZM
MAX. SURGE
CURRENT
(Note 5)
IZSM
MAX. REVERSE
LEAKAGE
CURRENT
IR
@
VR
MAX. TEMP.
COEFFICIENT
αVZ
JEDEC
TYPE
NUMBER
(Note 1)
VOLTS
mA
OHMS
mA
A
VOLTS
%/
oC
1N957B
1N958B
1N959B
1N960B
1N961B
6.8
7.5
8.2
9.1
10
18.5
16.5
15.0
14.0
12.5
4.5
5.5
6.5
7.5
8.5
700
1.0
.5
.25
55
50
45
41
38
300
275
250
225
200
150
75
50
25
10
5.2
5.7
6.2
6.9
7.6
+0.05
+0.058
+0.065
+0.068
+0.075
1N962B
1N963B
1N964B
1N965B
1N966B
11
12
13
15
16
11.5
10.5
9.5
8.5
7.8
9.5
11.5
13.0
16
17
700
.25
32
31
28
25
24
175
160
150
130
120
5
8.4
9.1
9.9
11.4
12.2
+0.076
+0.077
+0.079
+0.082
+0.083
1N967B
1N968B
1N969B
1N970B
1N971B
18
20
22
24
27
7.0
6.2
5.6
5.2
4.6
21
25
29
33
41
750
.25
20
18
16
15
13
110
100
90
80
70
5
13.7
15.2
16.7
18.2
20.6
+0.085
+0.086
+0.087
+0.088
+0.090
1N972B
1N973B
1N974B
1N975B
1N976B
30
33
36
39
43
4.2
3.8
3.4
3.2
3.0
49
58
70
80
93
1000
1500
.25
12
11
10
9.5
8.8
65
60
55
46
44
5
22.8
25.1
27.4
29.7
32.7
+0.091
+0.092
+0.093
+0.094
+0.095
1N977B
1N978B
1N979B
1N980B
1N981B
47
51
56
62
68
2.7
2.5
2.2
2.0
1.8
105
125
150
185
230
1500
2000
.25
7.9
7.4
6.8
6.0
5.5
40
37
35
30
28
5
35.8
38.8
42.6
47.1
51.7
+0.095
+0.096
+0.097
1N982B
1N983B
1N984B
1N985B
1N986B
75
82
91
100
110
1.7
1.5
1.4
1.3
1.1
270
330
400
500
750
2000
3000
4000
.25
5.0
4.6
4.1
3.7
3.3
26
23
21
18
16
5
56.0
62.2
69.2
76.0
83.6
+0.098
+0.099
+0.11
1N987B
1N988B
1N989B
1N990B
1N991B
1N992B
120
130
150
160
180
200
1.0
0.95
0.85
0.80
0.68
0.65
900
1100
1500
1700
2200
2500
4500
5000
6000
6500
7100
8000
.25
3.1
2.7
2.4
2.2
2.0
1.8
15
13
12
11
10
9
5
91.2
98.8
114.0
121.6
136.8
152.0
+0.11
* JEDEC Registered Data
NOTE 1: The JEDEC type numbers shown (B suffix) have a +/-5% tolerance on nominal Zener voltage. The suffix A is used to identify +/-
10% tolerance; suffix C is used to identify +/-2%; and suffix D is used to identify +/-1% tolerance; no suffix indicates +/-20%
tolerance.
NOTE 2: Zener voltage (
VZ) is measured after the test current has been applied for 20 +/- 5 seconds. The device shall be suspended by its
leads with the inside edge of the mounting clips between .375” and .500” from the body. Mounting clips shall be maintained at a
temperature of 25 +8/ -2
oC.
NOTE 3: The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (IZT or
IZK) is superimposed on IZT or IZK. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve
and to eliminate unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.
NOTE 4: The values of
IZM are calculated for a +/- 5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener
voltage above VZT which results from zener impedance and the increase in junction temperature as power dissipation approaches
400 mW. In the case of individual diodes IZM is that value of current which results in a dissipation of 400 mW at 75
oC lead
temperature at 3/8” from body.
NOTE 5: The surge for IZSM is a square wave or equivalent half-sine wave pulse of 1/120 sec. duration.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
10-31-2003 REV B
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參數(shù)描述 |
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| JAN1N968B | 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述: |
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| JAN1N968BA | 制造商: 功能描述: 制造商:undefined 功能描述: |
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