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| 型號(hào)： | JAN1N981BUR-1 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 10-Bit LVTTL/GTLP Transceiver with Split LVTTL Port and Feedback Path |
| 中文描述： | 68 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 221K |
| 代理商： | JAN1N981BUR-1 |
Silicon 500 mW Zener Diodes
SCOTTSDALE DIVISION
1N957B, -1 thru 1N992B, -1 DO-35
W
M
.
C
1
(
ELECTRICAL CHARACTERISTICS* @ 25
o
C
NOMINAL
ZENER
VOLTAGE
(Note 2)
V
Z
I
ZT
NUMBER
(Note 1)
VOLTS
mA
1N957B
1N958B
1N959B
1N960B
1N961B
10
12.5
1N962B
1N963B
1N964B
1N965B
1N966B
16
7.8
1N967B
1N968B
1N969B
1N970B
1N971B
27
4.6
1N972B
1N973B
1N974B
1N975B
1N976B
43
3.0
1N977B
1N978B
1N979B
1N980B
1N981B
68
1.8
1N982B
1N983B
1N984B
1N985B
1N986B
110
1.1
1N987B
1N988B
1N989B
1N990B
1N991B
1N992B
200
0.65
* JEDEC Registered Data
NOTE 1:
The JEDEC type numbers shown (B suffix) have a +/-5% tolerance on nominal Zener voltage. The suffix A is used to identify +/-
10% tolerance; suffix C is used to identify +/-2%; and suffix D is used to identify +/-1% tolerance; no suffix indicates +/-20%
tolerance.
NOTE 2:
Zener voltage (
V
Z
) is measured after the test current has been applied for 20 +/- 5 seconds. The device shall be suspended by its
leads with the inside edge of the mounting clips between .375” and .500” from the body. Mounting clips shall be maintained at a
temperature of 25 +8/ -2
C.
NOTE 3:
The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (I
or
I
ZK
) is superimposed on I
ZT
or I
ZK
. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve
and to eliminate unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.
NOTE 4:
The values of
I
ZM
are calculated for a +/- 5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener
voltage above V
ZT
which results from zener impedance and the increase in junction temperature as power dissipation approaches
400 mW. In the case of individual diodes I
ZM
is that value of current which results in a dissipation of 400 mW at 75
C lead
temperature at 3/8” from body.
NOTE 5:
The surge for I
ZSM
is a square wave or equivalent half-sine wave pulse of 1/120 sec. duration.
ZENER
TEST
CURRENT
MAX. ZENER IMPEDANCE
(Note 3)
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
OHMS
OHMS
4.5
5.5
6.5
7.5
8.5
700
9.5
11.5
13.0
16
17
700
21
25
29
33
41
750
49
58
70
80
93
1500
105
125
150
185
230
2000
270
330
400
500
750
4000
900
1100
1500
1700
2200
2500
8000
MAX. DC
ZENER
CURRENT
(Note 4)
I
ZM
mA
55
50
45
41
38
32
31
28
25
24
20
18
16
15
13
12
11
10
9.5
8.8
7.9
7.4
6.8
6.0
5.5
5.0
4.6
4.1
3.7
3.3
3.1
2.7
2.4
2.2
2.0
1.8
MAX. SURGE
CURRENT
(Note 5)
I
ZSM
mA
300
275
250
225
200
175
160
150
130
120
110
100
90
80
70
65
60
55
46
44
40
37
35
30
28
26
23
21
18
16
15
13
12
11
10
9
MAX. REVERSE
LEAKAGE
CURRENT
I
R
@
μ
A
150
75
50
25
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
R
VOLTS
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
MAX. TEMP.
COEFFICIENT
α
VZ
%/
o
C
+0.05
+0.058
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.083
+0.085
+0.086
+0.087
+0.088
+0.090
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
+0.097
+0.098
+0.098
+0.099
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
JEDEC
TYPE
mA
1.0
.5
.5
.5
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
6.8
7.5
8.2
9.1
18.5
16.5
15.0
14.0
700
700
700
700
11
12
13
15
11.5
10.5
9.5
8.5
700
700
700
700
18
20
22
24
7.0
6.2
5.6
5.2
750
750
750
750
30
33
36
39
4.2
3.8
3.4
3.2
1000
1000
1000
1000
47
51
56
62
2.7
2.5
2.2
2.0
1500
1500
2000
2000
75
82
91
100
1.7
1.5
1.4
1.3
2000
3000
3000
3000
120
130
150
160
180
1.0
0.95
0.85
0.80
0.68
4500
5000
6000
6500
7100
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
10-31-2003 REV B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| JAN1N981C-1 | 功能描述:Zener Diode 68V 500mW ±2% Through Hole DO-35 (DO-204AH) 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/117 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:68V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:230 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:500nA @ 52V 不同 If 時(shí)的電壓 - 正向（Vf）:1.1V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類(lèi)型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35（DO-204AH） 標(biāo)準(zhǔn)包裝:1 |
| JAN1N981CUR-1 | 功能描述:Zener Diode 68V 500mW ±2% Surface Mount DO-213AA 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/117 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:68V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:230 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:500nA @ 52V 不同 If 時(shí)的電壓 - 正向（Vf）:1.1V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類(lèi)型:表面貼裝 封裝/外殼:DO-213AA（玻璃） 供應(yīng)商器件封裝:DO-213AA 標(biāo)準(zhǔn)包裝:1 |
| JAN1N981D-1 | 功能描述:Zener Diode 68V 500mW ±1% Through Hole DO-35 (DO-204AH) 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/117 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:68V 容差:±1% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:230 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:500nA @ 52V 不同 If 時(shí)的電壓 - 正向（Vf）:1.1V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類(lèi)型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35（DO-204AH） 標(biāo)準(zhǔn)包裝:1 |
| JAN1N981DUR-1 | 功能描述:Zener Diode 68V 500mW ±1% Surface Mount DO-213AA 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/117 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:68V 容差:±1% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:230 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:500nA @ 52V 不同 If 時(shí)的電壓 - 正向（Vf）:1.1V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類(lèi)型:表面貼裝 封裝/外殼:DO-213AA（玻璃） 供應(yīng)商器件封裝:DO-213AA 標(biāo)準(zhǔn)包裝:1 |
| JAN1N982B | 制造商:Motorola Inc 功能描述: |
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