參數(shù)資料
型號(hào)： JAN2N1131
英文描述： TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39
中文描述： 晶體管|晶體管|進(jìn)步黨| 35V的五（巴西）總裁| 600毫安一（c）| TO - 39封裝
文件頁(yè)數(shù)： 12/21頁(yè)
文件大小： 137K
代理商： JAN2N1131
MIL-PRF-19500/368F
2
1.4 Primary electrical characteristics.
hFE2 (1)
hFE1 (1)
|hfe|
Cobo
VBE(sat) (1)
VCE(sat)
VCE = 10 V
dc
IC = 2 mA dc
VCE = 10 V dc
IC = 20 mA dc
VCE = 10 V dc
IC = 10 mA dc
f = 5 MHz
VCB = 10 V dc
IE = 0
100 kHz
≤ f ≤ 1
MHz
IC = 50 mA dc
IB = 4 mA dc
IC = 50 mA dc
IB = 4 mA dc
pF
V dc
Min
30
40
3
Max
160
15
10
1.3
0.5
(1) Pulsed, (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
HANDBOOK
DEPARTMENT OF DEFENSE
MIL-HDBK-6100 - List of Case Outlines and Dimensions for Discrete Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
相關(guān)PDF資料
PDF描述
JAN2N1555A TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 15A I(C) | TO-3
JAN2N1556A TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 15A I(C) | TO-3
JAN2N1557A TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 15A I(C) | TO-3
JAN2N1558A TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 15A I(C) | TO-3
JAN2N1559A TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 15A I(C) | TO-3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N1131L 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk
JAN2N1132 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin TO-39
JAN2N1132-2 制造商: 功能描述: 制造商:undefined 功能描述:
JAN2N1132L 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin TO-5
JAN2N1142 制造商:n/a 功能描述:2N1142 N12I7E
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