參數(shù)資料
型號: JAN2N1890S
英文描述: TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | TO-39
中文描述: 晶體管|晶體管|叩| 60V的五(巴西)總裁| 500mA的一(c)| TO - 39封裝
文件頁數(shù): 7/19頁
文件大?。?/td> 103K
代理商: JAN2N1890S
MIL-PRF-19500/512E
15
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4
Magnitude of common
emitter small-signal
short-circuit forward-
current transfer ratio
3306
VCE = 10 V dc; IC = 50 mA dc;
f = 100 MHz
| hfe |
1.5
6.0
Open circuit output
capacitance
3236
VCB = 10 V dc; IE = 0
100 kHz
≤ f ≤ 1 MHz
Cobo
20
pF
Input capacitance
(output open-circuited)
3240
VEB = 0.5 V dc; IC = 0;
100 kHz
≤ f ≤ 1 MHz
Cibo
80
pF
Pulse response
On-time
3251
Test condition A; IC = 500 mA dc;
IB1 = 50 mA dc; (see figure 6)
td
15
ns
Rise time
3251
Test condition A; IC = 500 mA dc;
IB1 = 50 mA dc; (see figure 6)
tr
25
ns
Storage time
3251
Test condition A; IC = 500 mA dc;
IB1 = 50 mA dc; (see figure 7)
ts
175
ns
Fall time
3251
Test condition A; IC = 500 mA dc;
IB1 = 50 mA dc; (see figure 7)
tf
35
Ns
Subgroups 5, 6, and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure
in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
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JAN2N1893 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-39
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JAN2N2079A TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 15A I(C) | TO-36
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