參數(shù)資料
型號(hào)： JAN2N2221AL
英文描述： TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 800MA I(C) | TO-206AA
中文描述： 晶體管|晶體管|叩| 50V五（巴西）總裁| 800mA的一（c）|至206AA
文件頁(yè)數(shù)： 6/23頁(yè)
文件大?。?/td> 135K
代理商： JAN2N2221AL
MIL-PRF-19500/545D
14
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/, 4/
Resistance to solvents
3/, 4/, 5/
2026
1022
n = 15 leads, c = 0
n = 15 devices, c = 0
Temp cycling 3/, 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements
4/
Group A, subgroup 2
Bond strength 3/, 4/
2037
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
Breakdown voltage,
collector to emitter
3011
Bias condition D, IC = 100 mA
dc; IB = 0, pulsed (see 4.5.1)
V(BR)CEO
80
V dc
Collector to emitter cutoff
current
3041
Bias condition C, VCE = 60 V dc;
VBE = 0
ICES1
1.0
A dc
Collector to emitter cutoff
current
3041
Bias condition C, VCE = 100 V
dc; VBE = 0
ICES2
1.0
mA dc
Collector to emitter cutoff
current
3041
Bias condition D, VCE = 40 V dc;
IB = 0
ICEO
50
A dc
Emitter to base cutoff
current
3061
Bias condition D, VEB = 4 V dc;
IC = 0
IEBO1
1.0
A dc
Emitter to base cutoff
current
3061
Bias condition D, VEB = 5.5 V dc;
IC = 0
IEBO2
1.0
mA dc
See footnote at end of table.
相關(guān)PDF資料
PDF描述
JAN2N2221AUA TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
JAN2N2221AUB TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | CHIP
JAN2N2222AUA TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
JAN2N2222AUB TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
JAN2N2273 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N2221AUA 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 4PIN UA - Trays
JAN2N2221AUB 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN UB - Waffle Pack
JAN2N2222 制造商:Motorola 功能描述:2N222 MOT'87 N6E2B
JAN2N2222A 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
JAN2N2222AL 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk
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