參數(shù)資料
型號: JAN2N2604
英文描述: TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 30MA I(C) | TO-46
中文描述: 晶體管|晶體管|進(jìn)步黨| 45V的五(巴西)總裁| 30mA的一(c)|的TO - 46
文件頁數(shù): 19/21頁
文件大?。?/td> 137K
代理商: JAN2N2604
MIL-PRF-19500/368F
7
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
A
.061
.075
1.55
1.90
3
A1
.029
.041
0.74
1.04
B1
.022
.028
0.56
0.71
B2
.075 REF
1.91 REF
B3
.006
.022
0.15
0.56
5
D
.145
.155
3.68
3.93
D1
.045
.055
1.14
1.39
D2
.0375 BSC
.952 BSC
D3
.155
3.93
E
.215
.225
5.46
5.71
E3
.225
5.71
L1
.032
.048
0.81
1.22
L2
.072
.088
1.83
2.23
L3
.003
.007
0.08
0.18
5
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimension "A" controls the overall package thickness. When a window lid is used, dimension "A" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the
drawing.
5. Dimensions "B3" minimum and "L3" minimum and the appropriately castellation length define an unobstructed
three-dimensional space traversing all of the ceramic layers in which a castellation was designed.
(Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension "B3" maximum
and "L3" maximum define the maximum width and depth of the castellation at any point on its surface.
Measurement of these dimensions may be made prior to solder dipping.
* FIGURE 4. Physical dimensions, surface mount (2N3439UA, 2N3440UA) version.
相關(guān)PDF資料
PDF描述
JAN2N2605 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 30MA I(C) | TO-46
JAN2N2812 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | STR-1/4
JAN2N2814 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | STR-1/4
JAN2N2857 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 40MA I(C) | TO-72
JAN2N2857UB TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 40MA I(C) | LLCC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N2605 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.03A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk
JAN2N2608 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:P-CHANNEL J-FET
JAN2N2609 制造商:Solitron 功能描述:JAN QPL LOW POWER FIELD EFFECT TRANSISTORS
JAN2N26096K 制造商: 功能描述: 制造商:NAVCOM DEFENSE 功能描述: 制造商:undefined 功能描述:
JAN2N2708 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk