參數(shù)資料
型號(hào)： JAN2N428
英文描述： TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 400MA I(C) | TO-5
中文描述： 晶體管|晶體管|進(jìn)步黨| 12V的五（巴西）總裁| 400mA的一（c）|至5
文件頁(yè)數(shù)： 4/19頁(yè)
文件大?。?/td> 103K
代理商： JAN2N428
MIL-PRF-19500/512E
12
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any
plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of
final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be
considered as complying with the requirements for that subgroup.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Delta requirements. Delta requirements shall be as follows: 3/ 4/ 5/ 6/
Step
Inspection
MIL-STD-750
Symbol
Limit
Unit
1/ 2/
Method
Conditions
1.
Collector-base cutoff
current
3036
Bias condition D,
VCB = 60 V dc
ICB02 (1)
100 percent of initial
value or 5 nA dc,
whichever is greater.
2.
Forward current
transfer ratio
3076
VCE = 5 V dc;
IC = 100 mA dc;
pulsed see 4.5.1
hFE2 (1)
±25 percent change
from initial reading.
1/ See MIL-PRF-19500 for sampling plan.
2/ Devices which exceed the group A limits for this test shall not be acceptable.
3/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table II herein, step 2.
b. Subgroups 4 and 5, see table II herein, step 2.
4/ The delta measurements for table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table II herein, step 1.
b. Subgroups 3 and 6, see table II herein, step 1.
5/ The delta measurements for table VII of MIL-PRF-19500 are as follows:
a. Subgroup 6, see table II herein, step 1.
相關(guān)PDF資料
PDF描述
JAN2N4399 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 30A I(C) | TO-3
JAN2N43A TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 300MA I(C) | TO-5
JAN2N4405 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-39
JAN2N4449 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-46
JAN2N4449U TRANSISTOR | BJT | NPN | 15V V(BR)CEO | LLCC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N4399 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 30A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 30A 3PIN TO-3 - Bulk
JAN2N43A 制造商:GECO 功能描述:
JAN2N4405 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 3PIN TO-39 - Bulk
JAN2N4416A 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL J-FET
JAN2N4449 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 15V 3PIN TO-46 - Bulk
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