參數(shù)資料
型號(hào)： JAN2N5339
英文描述： TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-39
中文描述： 晶體管|晶體管|叩| 100V的五（巴西）總裁| 5A條一（c）| TO - 39封裝
文件頁(yè)數(shù)： 1/20頁(yè)
文件大?。?/td> 128K
代理商： JAN2N5339
MIL-PRF-19500/560E
6 March 2002
SUPERSEDING
MIL-PRF-19500/560D
3 January 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING
TYPE 2N5339 AND 2N5339U3 JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon switching transistors. Four
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two
levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-39), figures 2, 3, and 4 for JANHC and JANKC (die) and figure 5 for
U3 devices (TO-276AA) dimensions.
1.3 Maximum ratings.
Types
PT (1)
TA =
+25
°C
PT (2)
TC =
+25
°C
VCBO
VCEO
VEBO
IC
IB
TOP and TSTG
R
θJC
W
V dc
A dc
°C
°C/W
2N5339
2N5339U3
1.0
100
6.0
5.0
1.0
-65 to +200
17.5
12.5
(1) Derate linearly at 5.71 mW/
°C above T
A > +25°C.
(2) Derate linearly from 80 mW/
°C to 571 mW°C.
1.4
Primary electrical characteristics TA = +25°C. (Unless otherwise indicated, applies to all devices.)
Limits
hFE1 (1)
VCE = 2.0 V dc; IC = 0.5 A dc
hFE2 (1)
VCE = 2.0 V dc; IC = 2.0 A dc
hFE3 (1)
VCE = 2.0 V dc; IC = 5.0 A dc
Min
Max
60
240
40
(1) Pulsed (see 4.5.1).
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 6 June 2002.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
相關(guān)PDF資料
PDF描述
JAN2N539 TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
JAN2N539A TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
JAN2N5415UA BJT
JAN2N5416UA BJT
JAN2N5581 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-46
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N5339U3 制造商:Microsemi Corporation 功能描述:2N5339U3JAN - Bulk
JAN2N539 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
JAN2N539A 制造商: 功能描述: 制造商:undefined 功能描述:
JAN2N5415 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 200V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk
JAN2N5415S 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 200V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 200V 1A 3-Pin TO-39
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