- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄353838 > JAN2N5794 TRANSISTOR | BJT | PAIR | NPN | 40V V(BR)CEO | 600MA I(C) | TO-78 PDF資料下載
參數(shù)資料
| 型號(hào)： | JAN2N5794 |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 40V V(BR)CEO | 600MA I(C) | TO-78 |
| 中文描述： | 晶體管|晶體管|一對(duì)|叩| 40V的五（巴西）總裁| 600毫安一（c）|至78 |
| 文件頁(yè)數(shù)： | 19/19頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | JAN2N5794 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)當(dāng)前第19頁(yè)
MIL-PRF-19500/512E
9
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Required (see 4.3.2)
9
hFE2, ICBO2
Not applicable
11
ICBO2; hFE2; ICBO2 = 100 percent of
initial value or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
ICBO2 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
Subgroup 2 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of
MIL-STD-750; VCB = 10-20 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power
dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices
shall be permitted.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN2N5794U | TRANSISTOR | BJT | PAIR | NPN | 40V V(BR)CEO | 600MA I(C) | LLCC |
| JAN2N5926 | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50A I(C) | TO-210AE |
| JAN2N5927 | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100A I(C) | TO-114 |
| JAN2N599 | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-5 |
| JAN2N6051 | TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 12A I(C) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N5794U | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 0.6A 6PIN U - Bulk |
| JAN2N5795 | 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Bulk |
| JAN2N5796 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 6PIN TO-78 - Bulk |
| JAN2N5796U | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 6PIN U - Bulk |
| JAN2N5926 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50A I(C) | TO-210AE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。