參數(shù)資料
型號(hào)： JAN2N6383
英文描述： TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 10A I(C) | TO-3
中文描述： 晶體管|晶體管|達(dá)林頓|叩| 40V的五（巴西）總裁| 10A條一（c）|至3
文件頁(yè)數(shù)： 19/19頁(yè)
文件大小： 103K
代理商： JAN2N6383
MIL-PRF-19500/512E
9
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Required (see 4.3.2)
9
hFE2, ICBO2
Not applicable
11
ICBO2; hFE2; ICBO2 = 100 percent of
initial value or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
ICBO2 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
Subgroup 2 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of
MIL-STD-750; VCB = 10-20 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power
dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices
shall be permitted.
相關(guān)PDF資料
PDF描述
JAN2N6384 TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
JAN2N6385 TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 10A I(C) | TO-3
JAN2N650A TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5
JAN2N651A TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5
JAN2N652A TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N6384 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 60V 10A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON NPN 60V 10A 3PIN TO-204AA - Bulk
JAN2N6385 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 80V 10A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON NPN 80V 10A 3PIN TO-204AA - Bulk
JAN2N6437 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 100V 25A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 100V 25A 3PIN TO-3 - Bulk
JAN2N6438 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 120V 25A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 120V 25A 3PIN TO-3 - Bulk
JAN2N650A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5
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