參數(shù)資料
型號(hào)： JAN2N6764
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-3
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 38A條（丁）|至3
文件頁(yè)數(shù)： 1/23頁(yè)
文件大?。?/td> 135K
代理商： JAN2N6764
MIL-PRF-19500/545D
27 July 2001
SUPERSEDING
MIL-PRF-19500/545C
21 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER
TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated
device type.
1.2 Physical dimensions. See figure 1 (similar to T0-205), figures 2, 3, and 4 (JANHC and JANKC), and
figure 5 (U3).
1.3 Maximum ratings.
Types
PT
TA = +25°C
PT
TC = +25°C
VCBO
VCEO
VEBO
IC
(1)
Reverse
pulse (2)
energy
Safe
operating
area
Tstg
and TJ
W
V dc
A dc
mj
°C
2N5151, L
2N5153, L
1 (3)
11.8 (4)
100
80
5.5
2
10
15
See
figure 6
-65 to
+ 200
2N5151U3
2N5153U3
1.16 (5)
100 (6)
100
80
5.5
2
10
15
See
figure 6
-65 to
+ 200
(1) This value applies for Pw
≤ 8.3 ms, duty cycle ≤ 1 percent.
(2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy
test circuit of figure 7.
(3) Derate linearly 5.7 mW/
°C for TA > +25°C.
(4) Derate linearly 66.7 mW/
°C for TC > +25°C.
(5) Derate linearly 6.67 mW/
°C for T
A > +25°C.
(6) Derate linearly 571 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 27 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-
VAC, P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關(guān)PDF資料
PDF描述
JAN2N6766 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-3
JAN2N6768 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-3
JAN2N720A TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-18
JAN2N7218 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 28A I(D) | TO-254AA
JAN2N7219 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N6764T1 制造商:Microsemi Corporation 功能描述:MOSFET N-CH TO-254AA
JAN2N6766 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk
JAN2N6766T1 制造商:Microsemi Corporation 功能描述:2N6766T1JAN - Bulk
JAN2N6768 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk
JAN2N6768T1 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(3+Tab) TO-254 T/R 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk
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