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參數(shù)資料
| 型號： | JAN2N6766 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-3 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 30A條（?。﹟至3 |
| 文件頁數(shù)： | 4/23頁 |
| 文件大?。?/td> | 135K |
| 代理商： | JAN2N6766 |
MIL-PRF-19500/545D
12
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers
(or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to
the application of final lead finish.
4.4.3. Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
Subgroup
Method
Conditions
C2
2036
Test condition E, (not applicable for U3 packages).
C6
1037
VCB = 10 - 30 V dc, 6,000 cycles.
4.4.4. Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table IX of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
Subgroup
Method
Condition
Sampling plan
E1
1051
500 cycles
45 devices, c = 0
E2
1039
Condition A: 500 hours
45 devices, c = 0
E3
Not applicable
E4
3131
R
θJC = 15°C/W maximum (TO-205) 22 devices, c = 0 (See 4.5.2)
R
θJC = 1.75°C/W maximum (U3)
22 devices, c = 0 (See 4.5.2)
See 4.5.2
E5
Not applicable
4.5. Methods of inspection and test. Methods of inspection and test shall be as specified in the appropriate tables
and as follows.
4.5.1. Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of
MIL-STD-750.
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相關代理商/技術參數(shù) |
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|---|---|
| JAN2N6766T1 | 制造商:Microsemi Corporation 功能描述:2N6766T1JAN - Bulk |
| JAN2N6768 | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JAN2N6768T1 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(3+Tab) TO-254 T/R 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JAN2N6770 | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JAN2N6770T1 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-254 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
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