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參數(shù)資料
| 型號： | JAN2N6768 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-3 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直|第14A條（?。﹟至3 |
| 文件頁數(shù)： | 7/23頁 |
| 文件大小： | 135K |
| 代理商： | JAN2N6768 |
MIL-PRF-19500/545D
15
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Forward current transfer
ratio
2N5151 2/
2N5153
3076
VCE = 5 V dc; IC = 50 mA dc,
pulsed (see 4.5.1)
hFE1
20
50
Forward current transfer
ratio
2N5151 2/
2N5153
3076
VCE = 5 V dc; IC = 2.5 A dc,
pulsed (see 4.5.1)
hFE2
30
70
90
200
Forward current transfer
ratio
2N5151 2/
2N5153
3076
VCE = 5 V dc; IC = 5 A dc, pulsed
(see 4.5.1)
hFE3
20
40
Base-emitter voltage (non-
saturated)
3066
Test condition B, VCE = 5 V dc;
IC = 2.5 A dc, pulsed (see 4.5.1)
VBE
1.45
V dc|
Base-emitter saturation
voltage
3066
Test condition A, IC = 2.5 A dc;
IB = 250 mA dc, pulsed (see
4.5.1)
VBE(sat)1
1.45
V dc
Base-emitter saturation
voltage
3066
Test condition A, IC = 5 A dc;
IB = 500 mA dc; pulsed (see
4.5.1)
VBE(sat)2
2.2
V dc
Collector-emitter saturation
voltage
3071
IC = 2.5 A dc; IB = 250 mA dc,
pulsed (see 4.5.1)
VCE(sat)1
0.75
V dc
Collector-emitter saturation
voltage
3071
IC = 5 A dc; IB = 500 mA dc,
pulsed (see 4.5.1)
VCE(sat)2
1.5
V dc
Subgroup 3
High temperature
operation:
TC = +150°C
Collector to emitter cutoff
current
3041
Bias condition A, VCE = 60 V dc;
VBE = +2 V dc
ICEX
500
A dc
See footnote at end of table.
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