參數(shù)資料
型號(hào)： JAN2N7237
英文描述： TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-254AA
中文描述： 晶體管| MOSFET的| P通道| 200伏五（巴西）直| 11A條（?。﹟對(duì)254AA
文件頁(yè)數(shù)： 6/23頁(yè)
文件大?。?/td> 135K
代理商： JAN2N7237
MIL-PRF-19500/545D
14
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/, 4/
Resistance to solvents
3/, 4/, 5/
2026
1022
n = 15 leads, c = 0
n = 15 devices, c = 0
Temp cycling 3/, 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements
4/
Group A, subgroup 2
Bond strength 3/, 4/
2037
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
Breakdown voltage,
collector to emitter
3011
Bias condition D, IC = 100 mA
dc; IB = 0, pulsed (see 4.5.1)
V(BR)CEO
80
V dc
Collector to emitter cutoff
current
3041
Bias condition C, VCE = 60 V dc;
VBE = 0
ICES1
1.0
A dc
Collector to emitter cutoff
current
3041
Bias condition C, VCE = 100 V
dc; VBE = 0
ICES2
1.0
mA dc
Collector to emitter cutoff
current
3041
Bias condition D, VCE = 40 V dc;
IB = 0
ICEO
50
A dc
Emitter to base cutoff
current
3061
Bias condition D, VEB = 4 V dc;
IC = 0
IEBO1
1.0
A dc
Emitter to base cutoff
current
3061
Bias condition D, VEB = 5.5 V dc;
IC = 0
IEBO2
1.0
mA dc
See footnote at end of table.
相關(guān)PDF資料
PDF描述
JAN2N7368 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-254
JAN2N7369 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-254
JAN2N7372 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-254AA
JAN2N7373 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA
JAN2N918 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72
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JAN2N7369 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-254 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 10A 3PIN TO-254 - Bulk
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