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參數(shù)資料
| 型號： | JAN2N7369 |
| 英文描述： | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-254 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 80V的五（巴西）總裁| 10A條一（c）|至254 |
| 文件頁數(shù)： | 18/21頁 |
| 文件大?。?/td> | 137K |
| 代理商： | JAN2N7369 |
MIL-PRF-19500/368F
6
1.
Chip size................................. .040 x .040 inch ±.002 inch (1.02 mm x 1.02 mm ±0.05 mm).
2.
Chip thickness........................ .010
± .0015 inch nominal (0.254 mm ±0.038 mm).
3.
Top metal................................ Aluminum 30,000 minimum, 33,000 nominal.
4.
Back metal............................... A. Al/Ti/Ni/Ag 12k/3k/7k/7kminimum,15k/ 5k/10k/10k nominal.
B. Gold 2.500 minimum, 3000 nominal.
5.
Backside................................. Collector.
6.
Bonding pad........................... B = .005 x .008 inch (0.127 mm x 0.203 mm).
E = .010 x .007 inch (0.254 mm x 0.178 mm).
NOTES:
1.
Dimensions are in inches.
2.
Metric equivalents are given for general information only.
FIGURE 3. Physical dimensions JANHCB and JANKCB (die) B versions.
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