參數(shù)資料
型號: JAN2N7372
英文描述: TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-254AA
中文描述: 晶體管|晶體管|進步黨| 80V的五(巴西)總裁| 5A條一(c)|至254AA
文件頁數(shù): 12/19頁
文件大?。?/td> 103K
代理商: JAN2N7372
MIL-PRF-19500/512E
2
1.4 Primary electrical characteristics at TA = +25°C.
Limits
hFE1
VCE = 5.0 V dc
IC = 100 A dc
hFE2
VCE = 5.0 V dc
IC = 100 mA dc
hFE3
VCE = 5.0 V dc
IC = 500 mA dc
hFE4
VCE = 5.0 V dc
IC = 1.0 A dc
|hfe|
f = 100 MHz
VCE = 10 V dc
IC = 50 mA dc
Min
Max
50
100
300
70
25
1.5
6.0
Limits
VCE(SAT)2
IC = 500 mA dc
IB = 50 mA dc
Cobo
VCB = 10 V dc
IE = 0
100 kHz
≤ f ≤ 1 MHz
td
tr
ts
tf
Min
Max
V dc
0.5
pF
20
ns
15
ns
25
ns
175
ns
35
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
相關(guān)PDF資料
PDF描述
JAN2N7373 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA
JAN2N918 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72
JAN2N918UB BJT
JAN2N930 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 30MA I(C) | TO-18
JAN2N930UB BJT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N7373 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-254 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
JAN2N760A 制造商: 功能描述: 制造商:undefined 功能描述:
JAN2N760AL 制造商:TE Connectivity 功能描述:
JAN2N869A 制造商: 功能描述: 制造商:undefined 功能描述:
JAN2N911 制造商:TE Connectivity 功能描述: