- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353997 > JANS2N2904AL (MICROSEMI CORP) PNP SWITCHING SILICON TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | JANS2N2904AL |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SWITCHING SILICON TRANSISTOR |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 128K |
| 代理商： | JANS2N2904AL |
MIL-PRF-19500/560E
14
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - continued
Emitter to base, cutoff
current
3061
Bias condition D; VEB = 6.0 V dc
IEBO
100
A dc
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 0.5 A dc, pulsed
(see 4.5.1)
hFE1
60
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 2.0 A dc; pulsed
(see 4.5.1)
hFE2
60
240
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 5.0 A dc; pulsed
(see 4.5.1)
hFE3
40
Collector to emitter
voltage (saturated)
3071
IC = 2.0 A dc; IB = 0.2 A dc; pulsed
(see 4.5.1)
VCE(SAT)1
0.7
V dc
Collector to emitter
voltage (saturated)
3071
IC = 5.0 A dc; IB = 0.5 A dc; pulsed
(see 4.5.1)
VCE(SAT)2
1.2
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 2.0 A dc;
IB = 0.2 A dc; pulsed (see 4.5.1)
VBE(SAT)1
1.2
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 5.0 A dc;
IB = 0.5 A dc; pulsed (see 4.5.1)
VBE(SAT)2
1.8
V dc
Subgroup 3
High - temperature
operation
TA = +150°C
Collector to emitter
cutoff current
3041
Bias condition A; VCE = 90 V dc; VBE
= 1.5 V dc;
ICEX2
1.0
mA dc
Low-temperature
operation
TA = -55°C
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 2.0 A dc; Pulsed
(see 4.5.1)
hFE4
12
See footnote at end of table.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANS2N2905 | PNP SWITCHING SILICON TRANSISTOR |
| JANS2N2905A | PNP SWITCHING SILICON TRANSISTOR |
| JAN1N4617CURTR-1 | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
| JAN1N4617DUR-1 | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
| JAN1N4617DURTR | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANS2N2905 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N2905A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANS2N2905AL | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR, TO-5, LAW - Waffle Pack 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR, TO-5, LAW - Rail/Tube |
| JANS2N2906A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANS2N2906AL | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。