參數(shù)資料
型號(hào)： JANS2N3501
廠商： MICROSEMI CORP
元件分類(lèi)： 功率晶體管
英文描述： NPN SILICON TRANSISTOR
中文描述： 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
封裝： TO-39, 3 PIN
文件頁(yè)數(shù)： 6/20頁(yè)
文件大?。?/td> 128K
代理商： JANS2N3501
MIL-PRF-19500/560E
14
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - continued
Emitter to base, cutoff
current
3061
Bias condition D; VEB = 6.0 V dc
IEBO
100
A dc
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 0.5 A dc, pulsed
(see 4.5.1)
hFE1
60
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 2.0 A dc; pulsed
(see 4.5.1)
hFE2
60
240
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 5.0 A dc; pulsed
(see 4.5.1)
hFE3
40
Collector to emitter
voltage (saturated)
3071
IC = 2.0 A dc; IB = 0.2 A dc; pulsed
(see 4.5.1)
VCE(SAT)1
0.7
V dc
Collector to emitter
voltage (saturated)
3071
IC = 5.0 A dc; IB = 0.5 A dc; pulsed
(see 4.5.1)
VCE(SAT)2
1.2
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 2.0 A dc;
IB = 0.2 A dc; pulsed (see 4.5.1)
VBE(SAT)1
1.2
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 5.0 A dc;
IB = 0.5 A dc; pulsed (see 4.5.1)
VBE(SAT)2
1.8
V dc
Subgroup 3
High - temperature
operation
TA = +150°C
Collector to emitter
cutoff current
3041
Bias condition A; VCE = 90 V dc; VBE
= 1.5 V dc;
ICEX2
1.0
mA dc
Low-temperature
operation
TA = -55°C
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 2.0 A dc; Pulsed
(see 4.5.1)
hFE4
12
See footnote at end of table.
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